HM4447 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -25A RDS(ON) <9mΩ @ VGS=-10V
* High power and current handing capability
* Lead free product is acquired
* Surface mount package
Applica.
The HM4447 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management.
General Features
* VDS = -30V,ID = -25A RDS(ON) <9mΩ @ VGS=-10V
* High power and current handing ca.
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